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Cooking: Improved Induction
by Oliver Hellmund
Reinhard Metz
Peter Stipan
January 31, 2008
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| Fig. 1. Cross-sections of IGBT: a) TrenchStop-cell. b) Reverse
conducting-cell. |
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New IGBT concepts improve induction heating
efficiencies.
The old saying that “a watched pot never boils”
means that when impatiently waiting for something to happen, it seems to take
forever – but that was before induction cooktops were invented. Now one can
fill a pot of water, place it on an induction cooktop, turn on the energy and
watch the water come to a boil within 30 seconds. Induction cooking uses
electromagnetic energy to heat cookware made of magnetic material (steel, iron,
nickel or various alloys). When the unit is turned on, the coils produce a high
frequency alternating magnetic field that ultimately flows through the
cookware. Molecules in the cookware move rapidly back and forth, causing the
cookware to become hot and cook the food.
The market for
induction cooking increased rapidly in recent years, mainly in Europe for
induction cooktops and Asia for rice cookers. The technology is now
experiencing a growth trend in the Americas, with CookTek as a leading provider
of induction cooktops for commercial applications, using Infineon Technologies
Insulated Gate Bipolar Transistors (IGBTs). High efficiency is driving this
market towards high-performance, induction cooking products. In fact, when using
an induction cooktop, over 90 percent of every dollar spent on energy goes
right where it should go – into the pan. Gas delivers only 30 percent to the
pan, and traditional electric about 65 percent.
Induction circuits
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| Fig. 1b. Reverse conducting-cell. |
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The most common circuit used today for induction cooking is
the single-ended topology, which requires Infineon Technologies IGBTs with a
blocking voltage of 1,200 V. The switching frequencies are in the range of
about 25 kHz. It is obvious that only extremely low saturation voltage and low
switching losses are suitable here in order to obtain a high efficiency. The
Infineon TrenchStop™ technology is able to combine those two contradictory
demands. This technology allows much thinner substrates and highly optimized
doping schemes compared to a common Non-Punch-Through (NPT) technology. It is
especially the fieldstop concept that reduces the saturation voltage
effectively. The fieldstop principle is also applicable to thin wafer diodes. A
further development on the basis of the TrenchStop technology is the
integration of a reverse conducting diode into the IGBT structure according to
the cross sections, as seen in Fig. 1. This technology is called Reverse
Conducting (RC), as these devices have a monolithic body diode for clamping
reverse currents. The reverse conducting diode is formed using the intrinsic
diode of the MOSFET structure with the IGBT P-layer shorted in specific areas
to allow reverse current flow. This device is most applicable for soft
switching applications such as induction cooking plates, microwave ovens, or
rice cookers.
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Fig. 2. Cross-section view of a TrenchStop-cell of a
RC-IGBT, second generation. It is optimized for soft-switching applications,
realizing a low saturation voltage and low switching losses.
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On one hand, these RC-IGBTs combine a low
saturation voltage and low switching losses of the IGBT. On the other hand, the
integrated reverse diode has a low forward voltage drop and a low thermal
resistance. Test results have achieved blocking voltages up to 1,600 V and
static parameters and switching waveforms show the improvement of this technology.
The first products with this feature were introduced in
2003 with 600 V devices. Further implementations of this technology in 1,200 V
devices followed in 2005. Now, Infineon Technologies offers a full range of
voltage classes (600 V, 900 V, 1,000 V, 1,200 V and 1,600 V) with devices
having the integrated reverse diode. Fig. 2 shows a cross-section view of a
TrenchStop-cell of IHW20N120R2 (Inom = 30 A, VBRces = 1,200 V), one of
Infineon’s second generation of RC-IGBTs.
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Fig. 3a. Half-bridge topology for soft switching.
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“Soft switching” topologies use external components such as
inductors or capacitors in order to force either a low current or a low voltage
during the switching transition. Design engineers use two major topologies,
half-bridge and single-ended. These topologies dominate the market for
induction cooking. A half-bridge topology operates a
resonant circuit shown in Fig. 3a, which consists of the inductance Lres and
the capacitance Cres. Additionally, there is a snubber capacitance CS, which
dominates the voltage rate of rise over the IGBT. The larger the capacitance
CS, the slower the voltage increase dVce/dt during turn-off.
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Fig. 3b. Typical waveform
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The current shape in the resonant circuit is
approximately sinusoidal. Both of the IGBTs take over the current for a half
sine-wave period according to Fig. 3b. The IGBT is turned on during the
conduction period of the diode, so that the turn-on energy of the IGBT is
virtually zero. During turn-off, the snubber capacitor forces a slow increase
of the collector-emitter voltage, so that the turn-off energy is also highly
reduced. A single-ended topology circuit and its typical
waveforms are shown in Fig. 4. In contrast to the half-bridge topology, the
current waveform is almost triangular (light blue) while the voltage waveform
(dark blue) is sinusoidal. However, the IGBT is controlled in a way that it
turns on when the voltage has reached the zero level again. This ensures a zero
voltage switching during turn-on. The resulting voltage oscillation during
turn-off leads to a low voltage level across the IGBT. The tail current
therefore does not dominate the turn-off energy and the turn-off transition
generates little losses.
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Fig. 4. Single-ended topology for soft switching and typical
waveform.
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Infineon’s newest RC-IGBT IHW30N160R in 1,600
V/30 A addresses soft-switching applications such as induction cookers in
single-ended topologies that need much higher breakdown voltages. The 1,200 V
device is still the most common IGBT voltage class used in these applications. A higher breakdown voltage gives the
manufacturer a higher safety margin against over-voltage peaks that may occur
for different reasons, such as net instabilities of the power source.
To account for a higher breakdown voltage, the thickness of
the IGBT has to be increased to lower the electric field from the junction to
the backside of the IGBT. This increase in thickness has two natural
consequences, i.e. an increase in the on-state losses as well as the switching
losses.
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Fig. 5. VF vs. VCEsat of the new 1,600 V RC2-IGBT
(IHW30N160R2), measured at nominal current of 30 A
and at temperatures from 25 DegC up to 175 DegC.
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Using TrenchStop-technology plus reverse conduction enables
a device with low on-state losses (VF and VCEsat) and low switching losses. In
Fig. 5, typical VF and VCEsat values of IHW30N160R are displayed for different
temperatures. Comparing with typical values from competitors at 25 DegC yields
the following for VCEsat: - Competitor 1: 3.7V @
40A.
- Competitor 2: 4V @ 40A.
- IHW30N160R2: 1.8V @ 30A, and
2.4V @ 60A.
In Fig. 6, measured Eoff values are displayed as a function
of temperature for the whole class of RC-IGBTs. The trend shows with increasing
breakdown voltage, the switching losses increase, which is due to the
increasing thickness of the IGBT. As it was demonstrated for the 1,200 V
RC-IGBTs, the TrenchStop-technology plus reverse conduction enables very
effective devices, which is true for each voltage class.
One OEM’s experience
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| Fig. 6. Typical Eoff values of RC-IGBT’s for soft-switching
conditions: voltage increase of 100 V per µs with a final voltage of 600 V,
gate resistor of 15 V, collector current IC = 30 A.
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CookTek designs and manufactures commercial
induction equipment, primarily cooking and warming appliances. Fig. 7 shows
several typical examples. On the lower right is a 240 V input dual element
cooktop that provides up to 3,500 W of output power. In the
top left corner is a pizza delivery system. At the bottom of an insulated pizza
transport bag is embedded a special energy storing and temperature sensing
induction heating load pellet. The pellet consists of a special magnetic alloy
that is encapsulated in a heat retentive plastic. The alloy activates the
electromagnetic field produced by the charger, which in turn provides just the
right amount of heat to be evenly dispersed throughout the pellet. When the
pellet is fully heated, the induction charger automatically senses this, and
the bag is now ready to maintain the perfect temperature for a hot pizza
delivery time of up to 45 minutes. The same induction
technology is used in a variety of products, including multiple element cook
tops and woks, as shown in Fig. 7.
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Fig. 7. Sampling of CookTek induction products. At top left,
a thermal pizza delivery system. Top right: single element wok style cooktop.
Bottom left: single element cooktop. Bottom right: double element cooktop.
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The key to CookTek’s products is their industry
leading performance and reliability. For example, the induction inverters in
these appliances operate with efficiencies in the mid-90 percent range. This
level of efficiency is achieved with a parallel resonant tank inverter design
that requires the IGBTs to conduct only the load energy replenishment current,
and through a combination of zero voltage switching and low CESAT voltages.
Infineon TrenchStop-technology IGBTs were carefully and specifically selected
to provide the best performance in both of these areas. Efficiency with these
parts in this design has been found to be so good that, for some products, the
unit’s bottom plate suffices as the heat sink. Commercial
cooking applications demand exceptional reliability in the midst of highly
stressful environments, in terms of ambient air temperature, humidity, grease,
power line disturbances, etc. Infineon IGBTs have provided exceptional
reliability by way of their excellent breakdown voltage characteristics and
power handling capability. Outstanding device operating temperature ranges
(Tjmax = 175 DegC) provide large thermal margins, even in highly stressful
environments. Furthermore, the integrated reverse conduction diodes allow the
elimination of external diodes, providing a cost reduction in many applications. A
watched pot does boil when induction-heating products are used.
Reverse-conducting IGBTs with breakdown voltages in the range from 900 V to
1,600 V are used in induction-heating products. The advantages of lower
switching losses and lower on-state losses by using Infineon Technologies
TrenchStop-technology plus reverse conduction are found in CookTek induction
heating products. Benefits of induction heating and new RC-IGBT technology are
high efficiency (low power losses) and cost-effective induction-cooking
systems. For more information email:
peter.stipan@infineon.com.
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Oliver Hellmund Oliver Hellmund is senior manager development,
power devices, Infineon Technologies, Munich, Germany
Reinhard Metz Reinhard Metz is chief technologist, CookTek,
Chicago, Ill.
Peter Stipan Peter Stipan is marketing and business
development manager, Infineon Technologies, Wind Lake, Wis.
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